登入帳戶  | 訂單查詢  | 購物車/收銀台( 0 ) | 在線留言板  | 付款方式  | 聯絡我們  | 運費計算  | 幫助中心 |  加入書簽
會員登入 新註冊 | 新用戶登記
HOME新書上架暢銷書架好書推介特價區會員書架精選月讀2023年度TOP分類閱讀雜誌 香港/國際用戶
最新/最熱/最齊全的簡體書網 品種:超過100萬種書,正品正价,放心網購,悭钱省心 送貨:速遞 / EMS,時效:出貨後2-3日

2024年03月出版新書

2024年02月出版新書

2024年01月出版新書

2023年12月出版新書

2023年11月出版新書

2023年10月出版新書

2023年09月出版新書

2023年08月出版新書

2023年07月出版新書

2023年06月出版新書

2023年05月出版新書

2023年04月出版新書

2023年03月出版新書

2023年02月出版新書

『簡體書』半导体物理性能手册 第1卷

書城自編碼: 2400786
分類: 簡體書→大陸圖書→工業技術電子/通信
作者: [日]足立贞夫 著
國際書號(ISBN): 9787560345130
出版社: 哈尔滨工业大学出版社
出版日期: 2014-04-01

頁數/字數: 344/
書度/開本: 16开

售價:NT$ 1782

我要買

share:

** 我創建的書架 **
未登入.



新書推薦:
利益相关者:战略管理全新视角  [美]R.爱德华·弗里曼
《 利益相关者:战略管理全新视角 [美]R.爱德华·弗里曼 》

售價:NT$ 442.0
以色列的诞生:荣耀2024版(2024版全2册)
《 以色列的诞生:荣耀2024版(2024版全2册) 》

售價:NT$ 672.0
山林果园散养土鸡新技术(彩色图解+视频升级版)
《 山林果园散养土鸡新技术(彩色图解+视频升级版) 》

售價:NT$ 391.0
一个女人的世界史:伊丽莎白·马什的磨难
《 一个女人的世界史:伊丽莎白·马什的磨难 》

售價:NT$ 515.0
大雨艺术设定画集
《 大雨艺术设定画集 》

售價:NT$ 941.0
激发改变:点燃内心渴望,实现终身成长   [美]理查德·博亚特兹
《 激发改变:点燃内心渴望,实现终身成长 [美]理查德·博亚特兹 》

售價:NT$ 554.0
欧洲史:从古希腊到冷战后
《 欧洲史:从古希腊到冷战后 》

售價:NT$ 1109.0
蓝湖战略:在细分市场打造制造业的“隐形冠军”
《 蓝湖战略:在细分市场打造制造业的“隐形冠军” 》

售價:NT$ 386.0

建議一齊購買:

+

NT$ 360
《 大话5G 》
+

NT$ 398
《 微波射频器件和天线的精细设计与实现 》
+

NT$ 656
《 现代天线设计(第2版) 》
+

NT$ 247
《 光电子材料与器件 》
內容簡介:
《半导体物理性能手册第1卷英文版》系Springer手册精选原版系列。《半导体物理性能手册第1卷英文版》主要包括Diamond(C)、Silicon(Si)、Germanium(C)、Gray Tin(a—Sn)、Cubic Silicon Carbide(3C—SiC)、Hexagonal Silicon Carbide(2H—,4H—,6H—SiC,etc.)、Rhombohedral Silicon Carbide(15R—,21R—,24R—SiC,etc.)等内容。
目錄
Preface
Acknowledgments
Contents of Other Volumes
1 Diamond (C)
1.1 Structural Properties
1.1.1 Ionicity
1.1.2 Elemental Isotopic Abundance and Molecular Weight
1.1.3 Crystal Structure and Space Group
1.1.4 Lattice Constant and Its Related Parameters
1.1.5 Structural Phase Transition
1.1.6 Cleavage Plane
1.2 Thermal Properties
1.2.1 Melting Point and Its Related Parameters
1.2.2 Specific Heat
1.2.3 Debye Temperature
1.2.4 Thermal Expansion Coefficient
1.2.5 Thermal Conductivity and Diffusivity
1.3 Elastic Properties
1.3.1 Elastic Constant
1.3.2 Third—Order Elastic Constant
1.3.3 Young''s Modulus, Poisson''s Ratio, and Similar
1.3.4 Microhardness
1.3.5 Sound Velocity
1.4 Phonons and Lattice Vibronic Properties
1.4.1 Phonon Dispersion Relation
1.4.2 Phonon Frequency
1.4.3 Mode Gruneisen Parameter
1.4.4 Phonon Deformation Potential
1.5 Collective Effects and Related Properties
1.5.1 Piezoelectric Constant
1.5.2 Frohlich Coupling Constant
1.6 Energy—Band Structure: Energy—Band Gaps
1.6.1 Basic Properties
1.6.2 E0—Gap Region
1.6.3 Higher—Lying Direct Gap
1.6.4 Lowest Indirect Gap
1.6.5 Conduction—Valley Energy Separation
1.6.6 Direct—Indirect—Gap Transition Pressure
1.7 Energy—Band Structure: Electron and Hole Effective Masses
1.7.1 Electron Effective Mass: Γ Valley
1.7.2 Electron Effective Mass: Satellite Valley
1.7.3 Hole Effective Mass
1.8 Electronic Deformation Potential
1.8.1 Intravalley Deformation Potential: Γ Point
1.8.2 Intravalley Deformation Potential: High—Symmetry Points
1.8.3 Intervalley Deformation Potential
1.9 Electron Affinity and Schottky Barrier Height
1.9.1 Electron Affinity
1.9.2 Schottky Barrier Height
1.10 Optical Properties
1.10.1 Summary of Optical Dispersion Relations
1.10.2 The Reststrahlen Region
1.10.3 At or Near the Fundamental Absorption Edge
1.10.4 The Interband Transition Region
1.10.5 Free—Carrier Absorption and Related Phenomena
1.11 Elastooptic, Electrooptic, and Nonlinear Optical Properties
1.11.1 Elastooptic Effect
1.11.2 Linear Electrooptic Constant
1.11.3 Quadratic Electrooptic Constant
1.11.4 Franz—Keldysh Effect
1.11.5 Nonlinear Optical Constant
1.12 Carrier Transport Properties
1.12.1 Low—Field Mobility: Electrons
1.12.2 Low—Field Mobility: Holes
1.12.3 High—Field Transport: Electrons
1.12.4 High—Field Transport: Holes
1.12.5 Minority—Carrier Transport: Electrons in ρ—Type Materials
1.12.6 Minority—Carrier Transport: Holes in n—Type Materials
1.12.7 Impact Ionization Coefficient
2 Silicon (Si)
2.1 Structural Properties
2.1.1 Ionicity
2.1.2 Elemental Isotopic Abundance and Molecular Weight
2.1.3 Crystal Structure and Space Group
2.1.4 Lattice Constant and Its Related Parameters
2.1.5 Structural Phase Transition
2.1.6 Cleavage Plane
2.2 Thermal Properties
2.2.1 Melting Point and Its Related Parameters
2.2.2 Specific Heat
2.2.3 Debye Temperature
2.2.4 Thermal Expansion Coefficient
2.2.5 Thermal Conductivity and Diffusivity
2.3 Elastic Properties
2.3.1 Elastic Constant
2.3.2 Third—Order Elastic Constant
2.3.3 Young''s Modulus, Poisson''s Ratio, and Similar
2.3.4 Microhardness
2.3.5 Sound Velocity
2.4 Phonons and Lattice Vibronic Properties
2.4.1 Phonon Dispersion Relation
2.4.2 Phonon Frequency
2.4.3 Mode Gruneisen Parameter
2.4.4 Phonon Deformation Potential
2.5 Collective Effects and Related Properties
2.5.1 Piezoelectric Constant
2.5.2 Frohlich Coupling Constant
2.6 Energy—Band Structure: Energy—Band Gaps
2.6.1 Basic Properties
2.6.2 E0—Gap Region
2.6.3 Higher—Lying Direct Gap
2.6.4 Lowest Indirect Gap
2.6.5 Conduction—Valley Energy Separation
2.6.6 Direct—Indirect—Gap Transition Pressure
2.7 Energy—Band Structure: Electron and Hole Effective Masses
2.7.1 Electron Effective Mass: Γ Valley
2.7.2 Electron Effective Mass: Satellite Valley
2.7.3 Hole Effective Mass
2.8 Electronic Deformation Potential
2.8.1 Intravalley Deformation Potential: Γ Point
2.8.2 Intravalley Deformation Potential: High—Symmetry Points
2.8.3 Intervalley Deformation Potential
2.9 Electron Affinity and Schottky Barrier Height
2.9.1 Electron Affinity
2.9.2 Schottky Barrier Height
2.10 Optical Properties
2.10.1 Summary of Optical Dispersion Relations
2.10.2 The Reststrahlen Region
2.10.3 At or Near the Fundamental Absorption Edge
2.10.4 The Interband Transition Region
2.10.5 Free—Carrier Absorption and Related Phenomena
2.11 Elastooptic, Electrooptic, and Nonlinear Optical Properties
2.11.1 Elastooptic Effect
2.11.2 Linear Electrooptic Constant
2.11.3 Quadratic Electrooptic Constant
2.11.4 Franz—Keldysh Effect
2.11.5 Nonlinear Optical Constant
2.12 Carrier Transport Properties
2.12.1 Low—Field Mobility: Electrons
2.12.2 Low—Field Mobility: Holes
2.12.3 High—Field Transport: Electrons
2.12.4 High—Field Transport: Holes
2.12.5 Minority—Carrier Transport: Electrons in p—Type Materials
2.12.6 Minority—Carrier Transport: Holes in n—Type Materials
2.12.7 Impact Ionization Coefficient
3 Germanium (C)
3.1 Structural Properties
3.1.1 Ionicity
3.1.2 Elemental Isotopic Abundance and Molecular Weight
3.1.3 Crystal Structure and Space Group
3.1.4 Lattice Constant and Its Related Parameters
3.1.5 Structural Phase Transition
3.1.6 Cleavage Plane
3.2 Thermal Properties
3.2.1 Melting Point and Its Related Parameters
3.2.2 Specific Heat
3.2.3 Debye Temperature
3.2.4 Thermal Expansion Coefficient
3.2.5 Thermal Conductivity and Diffusivity
3.3 Elastic Properties
3.3,1 Elastic Constant
3.3.2 Third—Order Elastic Constant
3.3.3 Young''s Modulus, Poisson''s Ratio, and Similar
3.3.4 Microhardness
3.3.5 Sound Velocity
3.4 Phonons and Lattice Vibronic Properties
3.4.1 Phonon Dispersion Relation
3.4.2 Phonon Frequency
3.4.3 Mode Gruneisen Parameter
3.4.4 Phonon Deformation Potential
3.5 Collective Effects and Related Properties
3.5.1 Piezoelectric Constant
3.5.2 Frohlich Coupling Constant
3.6 Energy—Band Structure: Energy—Band Gaps
3.6.1 Basic Properties
3.6.2 Eo—Gap Region
3.6.3 Higher—Lying Direct Gap
3.6.4 Lowest Indirect Gap
3.6.5 Conduction—Valley Energy Separation
3.6.6 Direct—Indirect—Gap Transition Pressure
3.7 Energy—Band Structure: Electron and Hole Effective Masses
3.7.1 Electron Effective Mass: F Valiey
3.7.2 Electron Effective Mass: Satellite Valley
3.7.3 Hole Effective Mass
3.8 Electronic Deformation Potential
3.8.1 Intravalley Deformation Potential: Γ Point
3.8.2 Intravalley Deformation Potential: High—Symmetry Points
3.8.3 Intervalley Deformation Potential
3.9 Electron Affinity and Schottky Barrier Height
3.9.1 Electron Affinity
3.9.2 Schottky Barrier Height
3.10 Optical Properties
3.10.1 Summary of Optical Dispersion Relations
3.10.2 The Reststrahlen Region
3.10.3 At or Near the Fundamental Absorption Edge
3.10.4 The Interband Transition Region
3.10.5 Free—Carrier Absorption and Related Phenomena
3.11 Elastooptic, Electrooptic, and Nonlinear Optical Properties
3.11.1 Elastooptic Effect
3.11.2 Linear Electrooptic Constant
3.11.3 Quadratic Electrooptic Constant
3.11.4 Franz—Keldysh Effect
3.11.5 Nonlinear Optical Constant
3.12 Carrier Transport Properties
3.12.1 Low—Field Mobility: Electrons
3.12.2 Low—Field Mobility: Holes
3.12.3 High—Field Transport: Electrons
3.12.4 High—Field Transport: Holes
3.12.5 Minority—Carrier Transport: Electrons in p—Type Materials
3.12.6 Minority—Carrier Transport: Holes in n—Type Materials
3.12.7 Impact Ionization Coefficient
4 Gray Tin (a—Sn)
4.1 Structural Properties
4.1.1 lonicity
4.1.2 Elemental Isotopic Abundance and Molecular Weight
4.1.3 Crystal Structure and Space Group
4.1.4 Lattice Constant and Its Related Parameters
4.1.5 Structural Phase Transition
4.1.6 Cleavage Plane
4.2 Thermal Properties
4.2.1 Melting Point and Its Related Parameters
4.2.2 Specific Heat
4.2.3 Debye Temperature
4.2.4 Thermal Expansion Coefficient
4.2.5 Thermal Conductivity and Diffusivity
4.3 Elastic Properties
4.3.1 Elastic Constant
4.3.2 Third—Order Elastic Constant
4.3.3 Young''s Modulus, Poisson''s Ratio, and Similar
4.3.4 Microhardness
4.3.5 Sound Velocity
4.4 Phonons and Lattice Vibronic Properties
4.4.1 Phonon Dispersion Relation
4.4.2 Phonon Frequency
4.4.3 Mode Gruneisen Parameter
4.4.4 Phonon Deformation Potential
4.5 Collective Effects and Related Properties
4.5.1 Piezoelectric Constant
4.5.2 Frohlich Coupling Constant
4.6 Energy—Band Structure: Energy—Band Gaps
4.6.1 Basic Properties
4.6.2 Eo—Gap Region
4.6.3 Higher—Lying Direct Gap
4.6.4 Lowest Indirect Gap
4.6.5 Conduction—Valley Energy Separation
4.6.6 Direct—Indirect—Gap Transition Pressure
4.7 Energy—Band Structure: Electron and Hole Effective Masses
4.7.1 Electron Effective Mass: Γ Valley
4.7.2 Electron Effective Mass: Satellite Valley
4.7.3 Hole Effective Mass
4.8 Electronic Deformation Potential
4.8.1 Intravalley Deformation Potential: Γ Point
4.8.2 Intravalley Deformation Potential: High—Symmetry Points
4.8.3 Intervalley Deformation Potential
4.9 Electron Affinity and Schottky Barrier Height
4.9.1 Electron Affinity
4.9.2 Schottky Barrier Height
4.10 Optical Properties
4.10.1 Summary of Optical Dispersion Relations
4.10.2 The Reststrahlen Region
4.10.3 At or Near the Fundamental Absorption Edge
4.10.4 The Interband Transition Region
4.10.5 Free—Carrier Absorption and Related Phenomena
4.11 Elastooptic, Electrooptic, and Nonlinear Optical Properties
4.11.1 Elastooptic Effect
4.11.2 Linear Electrooptic Constant
4.11.3 Quadratic Electrooptic Constant
4.11.4 Franz—Keldysh Effect
4.11.5 Nonlinear Optical Constant
4.12 Carrier Transport Properties
4.12.1 Low—Field Mobility: Electrons
4.12.2 Low—Field Mobility: Holes
4.12.3 High—Field Transport: Electrons
4.12.4 High—Field Transport: Holes
4.12.5 Minority—Carrier Transport: Electrons in p—Type Materials
4.12.6 Minority—Carrier Transport: Holes in n—Type Materials
4.12.7 Impact Ionization Coefficient
……
5 Cubic Silicon Carbide (3C—SiC)
6 Hexagonal Silicon Carbide (2H—, 4H—, 6H—SiC, etc.)
7 Rhombohedral Silicon Carbide (15R—, 21R—, 24R—SiC, etc.)

 

 

書城介紹  | 合作申請 | 索要書目  | 新手入門 | 聯絡方式  | 幫助中心 | 找書說明  | 送貨方式 | 付款方式 香港用户  | 台灣用户 | 海外用户
megBook.com.tw
Copyright (C) 2013 - 2024 (香港)大書城有限公司 All Rights Reserved.